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 DSS 16-01A DSS 16-01AS
Power Schottky Rectifier
IFAV = 16 A VRRM = 100 V VF = 0.64 V
VRSM V 100
VRRM V 100
Type
A
C
TO-263 AB (AS-Type)
C (TAB) C A C A
TO-220 AC (A-Type)
DSS 16-01A
DSS 16-01AS
C (TAB)
A = Anode, C = Cathode , TAB = Cathode
Symbol IFRMS IFAV IFSM EAS IAR (dv/dt)cr TVJ TVJM Tstg Ptot Md Weight
Conditions TC = 155C; rectangular, d = 0.5 TVJ = 45C; tp = 10 ms (50 Hz), sinev IAS = 9.5 A; L = 180 H; TVJ = 25C; non repetitive VA =1.5 * VRRM typ.; f=10 kHz; repetitive
Maximum Ratings 35 16 230 10 1 5000 -55...+175 175 -55...+150 A A A mJ A V/ms C C C W Nm g
Features * International standard package * Very low VF * Extremely low switching losses * Low IRM-values * Epoxy meets UL 94V-0
Applications * Rectifiers in switch mode power supplies (SMPS) * Free wheeling diode in low voltage converters
TC = 25C mounting torque (A-Type only) typical
105 0.4...0.6 2
Advantages * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses
Symbol IR VF
Conditions TVJ = 25C VR = VRRM TVJ = 125C VR = VRRM IF = 15 A; IF = 15 A; IF = 30 A; TVJ = 125C TVJ = 25C TVJ = 125 C
Characteristic Values typ. max. 0.5 5 0.64 0.79 0.76 1.4 0.5 mA mA V V V K/W K/W Dimensions see outlines.pdf
RthJC RthCH
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, Conditions and dimensions.
007
(c) 2000 IXYS All rights reserved
1-2
DSS 16-01A DSS 16-01AS
100 A IF IR 10 mA
TVJ=175C
1000 pF CT
1 150C
125C
0.1 100C 10
TVJ = 175C 150C 125C 25C 75C
100 0.01
50C
0.001
25C
1 0.0
0.0001 0.2 0.4 0.6 VF 0.8 V 1.0 0 20 40 60 80 V 100 VR
10 0 20 40 60
TVJ= 25C
80 V 100 VR
Fig. 1 Maximum forward voltage drop characteristics
40 A 35 30 IF(AV) 25 20 15 10 5 0 0 40 80 120 TC 160C d=0.5 DC
Fig. 2 Typ. value of reverse current IR versus reverse voltage VR
30 W P(AV) 25 20 15 10 5 0 0 5 10 15 20 25 IF(AV) 30 A d= DC 0.5 0.33 0.25 0.17 0.08
Fig. 3 Typ. junction capacitance CT versus reverse voltage VR
10000
A IFSM
1000
100 10
100
1000 s 10000 tP
Fig. 4 Average forward current IF(AV) versus case temperature TC
Fig. 5 Forward power loss characteristics
1 K/W ZthJC
D=0.5 0.33 0.25 0.17 0.08
0.1
Single Pulse (Thermal Resistance)
DSS 16-01A
0.01 0.0001
0.001
0.01
0.1
1 t
s
10
Fig. 6 Transient thermal impedance junction to case at various duty cycles
Note: All curves are per diode
007
(c) 2000 IXYS All rights reserved
2-2


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